Diodes ZXMS6004DT8 - Manual (Page 4)

ZXMS6004DT8
Document Number DS32245 Rev. 1 - 2
4 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6004DT8 is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol Description
Min Max Units
V
IN
Input voltage range 0 5.5 V
T
A
Ambient temperature range -40 125 °C
V
IH
High level input voltage for MOSFET to be on 3 5.5 V
V
IL
Low level input voltage for MOSFET to be off 0 0.7 V
V
P
Peripheral supply voltage (voltage to which load is referred) 0 36 V
CHARACTERISTICS
1 10
10m
100m
1
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
See Note (a)(d)
Limited
by R
DS(on)
1ms
10ms
100ms
1s DC
Safe Operating Area
I D
Dr
ai
n C
u
rr
ent
(
A
)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1 active die
Derating Curve
Temperature (°C)
M
a
x
P
o
wer
Dis
s
ipat
io
n (
W
)
2 active die
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
T
amb
=25°C
See Note (a)(d)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
herm
al
R
es
is
tanc
e (°
C
/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
See Note (a)(d)
Pulse Power Dissipation
Pulse Width (s)
Ma
x
imu
m P
o
w
e
r (
W
)