Diodes ZXMS6006DG - Manual (Page 3)

ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
3 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Continuous Drain-Source Voltage V
DS
60 V
Drain-Source Voltage for Short Circuit Protection V
DS(SC)
16 V
Continuous Input Voltage V
IN
-0.5 ... +6 V
Continuous Input Current @-0.2V ≤ V
IN
≤ 6V
Continuous Input Current @V
IN
< -0.2V or V
IN
> 6V
I
IN
No limit
│I
IN
│≤2
mA
Pulsed Drain Current @V
IN
= 3.3V I
DM
11 A
Pulsed Drain Current @V
IN
= 5V I
DM
13 A
Continuous Source Current (Body Diode) (Note 4) I
S
2 A
Pulsed Source Current (Body Diode) I
SM
12 A
Unclamped Single Pulse Inductive Energy,
T
J = 25
°C, I
D = 0.5A, V DD = 24V
E AS
490 mJ
Electrostatic Discharge (Human Body Model) V
ESD
4000 V
Charged Device Model V
CDM
1000 V
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Power Dissipation at T
A
= 25
°C (Note 4)
Linear Derating Factor
P
D
1.3
10.4
W
mW/
°C
Power Dissipation at T
A
= 25 °C (Note 5)
Linear Derating Factor
P D
3.0
24
W
mW/
°C
Thermal Resistance, Junction to Ambient (Note 4) R θJA 96 °C/W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 42 °C/W
Thermal Resistance, Junction to Case (Note 6) R θJC 12 °C/W
Operating Temperature Range T
J
-40 to +150 °C
Storage Temperature Range T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in still air conditions.
5. For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in still air conditions.
6. Thermal resistance between junction and the mounting surfaces of drain and source pins.