Typical characteristics, Typical output characteristic, Threshold voltage vs temperature – Diodes ZXMS6006DG User Manual
Page 6: On-resistance vs input voltage, Reverse diode characteristic, On-resistance vs temperature, Input current vs input voltage
ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
6 of 9
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Typical Characteristics
0
1
2
3
4
5
6
7
8
9
10 11 12
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.00
0.05
0.10
0.15
0.20
-50
-25
0
25
50
75
100 125 150
0.00
0.05
0.10
0.15
0.20
0
1
2
3
4
5
0
20
40
60
80
100
120
0.4
0.6
0.8
1.0
0.01
0.1
1
10
3V
2.5V
2V
5V
4.5V
4V
3.5V
3V
Typical Output Characteristic
T
A
= 25°C
V
IN
I
D
D
rai
n Current
(A
)
V
DS
Drain-Source Voltage (V)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
V
TH
Th
re
s
hol
d V
o
lt
age
(
V
)
T
J
Junction Temperature (°C)
T
J
= 150°C
On-Resistance vs Input Voltage
T
J
= 25°C
R
DS(
o
n
)
O
n-Res
is
tanc
e
(
Ω
)
V
IN
Input Voltage (V)
I
D
= 1A
Reverse Diode Characteristic
V
IN
= 3V
V
IN
= 5V
On-Resistance vs Temperature
T
J
Junction Temperature (°C)
R
DS
(o
n
)
O
n
-Res
is
tanc
e
(
Ω
)
Input Current vs Input Voltage
I
IN
I
npu
t C
u
rren
t (
μ
A)
V
IN
Input Voltage (V)
V
SD
Source-Drain Voltage (V)
I
S
So
u
rc
e
C
u
re
n
t (
A)
T
J
=25°C
T
J
=150°C