Diodes ZXMS6006DG - Manual (Page 4)

ZXMS6006DG
Document number: DS35142 Rev. 1 - 2
4 of 9
www.diodes.com
December 2010
© Diodes Incorporated
ZXMS6006DG
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Recommended Operating Conditions
The ZXMS6006DG is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic Symbol Min Max Unit
Input Voltage Range V
IN
0 5.5 V
Ambient Temperature Range T
A
-40 125 °C
High Level Input Voltage for MOSFET to be on V
IH
3 5.5 V
Low level input voltage for MOSFET to be off V
IL
0 0.7 V
Peripheral Supply Voltage (voltage to which load is referred) V
P
0 16 V
Thermal Characteristics
1 10
10m
100m
1
10
Limit of s/c protection
15X15X1.6 mm
Single 1oz FR4
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I D
Dra
in C
u
rr
en
t
(A
)
V
DS
Drain-Source Voltage (V)
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
15X15X1.6 mm
Single 1oz FR4
T
amb
=25°C
50X50X1.6 mm
Single 2oz FR4
15X15X1.6 mm
Single 1oz FR4
Derating Curve
Temperature (°C)
M
a
x
P
o
we
r
D
is
s
ipat
ion (W
)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Th
erm
al Re
s
is
tan
c
e
(
°C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
15X15X1.6 mm
Single 1oz FR4
Pulse Power Dissipation
Pulse Width (s)
Ma
x
imu
m P
o
w
e
r
(W
)