Diodes ZXMHC10A07N8 - Manual

Issue 1.0 - March 2009 1
© Diodes Incorporated
www.diodes.com
A Product Line of
Diodes Incorporated
ZXMHC10A07N8
100V SO8 Complementary enhancement mode MOSFET H-Bridge
Summary
Device V
(BR)DSS
Q
G
R
DS(on)
I
D
T
A
= 25
°C
N-CH 100V 2.9nC
0.70 Ω @ V
GS
= 10V 1.0A
0.90 Ω @ V
GS
= 6.0V 0.9A
P-CH -100V 3.5nC
1.00 Ω @ V
GS
= -10V -0.9A
1.45 Ω @ V
GS
= -6.0V -0.7A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Features
• 2 x N + 2 x P channels in a SOIC package
Applications
• DC Motor control
• DC-AC Inverters
Ordering information
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMHC10A07N8TC 13 12 2,500
Device marking
ZXMHC
10A07
P1S/P2S
N1S/N2S
P1G P2G
N2G N1G
P1D/N1D P2D/N2D