Diodes ZXMHC10A07N8 - Manual (Page 7)

ZXMHC10A07N8
Issue 1.0 - March 2009 7
© Diodes Incorporated
www.diodes.com
P-channel electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-Source breakdown
voltage
V
(BR)DSS
-100 V I
D
= -250
μA, V
GS
= 0V
Zero Gate voltage Drain
current
I
DSS
-0.5 µA V
DS
= -100V, V
GS
= 0V
Gate-Body leakage I
GSS
±
100 nA V
GS
=
±20V, V
DS
= 0V
Gate-Source threshold
voltage
V
GS(th)
-2.0 -4.0 V I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source
on-state resistance
(a) R
DS(on)
1.0
1.45
Ω
V
GS
= -10V, I
D
= -0.6A
V
GS
= -6.0V, I
D
= -0.5A
Forward
Transconductance
(a) (c) g
fs
1.2 S V
DS
= -15V, I
D
= -0.6A
Dynamic
Capacitance
(c)
Input capacitance C
iss
141 pF
V
DS
= -50V, V
GS
= 0V
f= 1MHz
Output capacitance C
oss
13.1 pF
Reverse transfer
capacitance
C
rss
10.8 pF
Switching
(b) (c)
Turn-on-delay time t
d(on)
1.6 ns
V
DD
= -50V, V
GS
= -10V
I
D
= -1.0A
R
G
≅ 6.0Ω
Rise time t
r
2.1 ns
Turn-off delay time t
d(off)
5.9 ns
Fall time t
f
3.3 ns
Gate charge
(c)
Total Gate charge Q
g
3.5 nC
V
DS
= -50V, V
GS
= -10V
I
D
= -0.6A
Gate-Source charge Q
gs
0.6 nC
Gate-Drain charge Q
gd
1.6 nC
Source–Drain diode
Diode forward voltage
(a)
V
SD
-0.85 -0.95 V I
S
= -0.7A, V
GS
= 0V
Reverse recovery time
(c)
t
rr
29 ns
I
S
= -0.9A, di/dt= 100A/
μs
Reverse recovery charge
(c)
Q
rr
31 nC
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing