Diodes ZXMHC10A07N8 User Manual

Page 4

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ZXMHC10A07N8

Issue 1.0 - March 2009 4

© Diodes Incorporated

www.diodes.com



N-channel electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source breakdown
voltage

V

(BR)DSS

100 V

I

D

= 250

μA, V

GS

= 0V

Zero Gate voltage Drain
current

I

DSS

0.5

µA

V

DS

= 100V, V

GS

= 0V

Gate-Body leakage

I

GSS

±

100

nA

V

GS

=

±20V, V

DS

= 0V

Gate-Source threshold
voltage

V

GS(th)

2.0 4.0

V

I

D

= 250

μA, V

DS

= V

GS

Static Drain-Source

on-state resistance

(a)

R

DS(on)

0.7

0.9

V

GS

= 10V, I

D

= 1.5A

V

GS

= 6.0V, I

D

= 1.0A

Forward

Transconductance

(a) (c)

g

fs

1.6

S

V

DS

= 15V, I

D

= 1.0A

Dynamic

Capacitance

(c)

Input capacitance

C

iss

138

pF

V

DS

= 60V, V

GS

= 0V

f= 1MHz

Output capacitance

C

oss

12 pF

Reverse transfer
capacitance

C

rss

6

pF

Switching

(b) (c)

Turn-on-delay time

t

d(on)

1.8 ns

V

DD

= 50V, V

GS

= 10V

I

D

= 1.0A

R

G

≅ 6.0Ω,

Rise time

t

r

1.5 ns

Turn-off delay time

t

d(off)

4.1 ns

Fall time

t

f

2.1 ns

Gate charge

(c)

Total Gate charge

Q

g

2.9 nC

V

DS

=50V, V

GS

= 10V

I

D

= 1.0A

Gate-Source charge

Q

gs

0.7 nC

Gate-Drain charge

Q

gd

1.0 nC

Source–Drain diode

Diode forward voltage

(a)

V

SD

0.95

V

I

S

= 1.5A, V

GS

= 0V

Reverse recovery time

(c)

t

rr

27 ns

I

S

= 1.8A, di/dt= 100A/

μs

Reverse recovery charge

(c)

Q

rr

12 nC

NOTES:

(a) Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%.

(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing

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