500mv v, 200mv/div v, 1v/div i – Diodes AP2138/2139 User Manual
Page 19: Figure 14. line transient (v, 3 to 5.3v, i, 10ma, Figure 15. load transient (v, 3v, i, 1ma to150ma)
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19
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139
Typical Performance Characteristics (Continued)
Figure 12. Dropout Voltage vs. Output Current
Figure 13. Dropout Voltage vs. Junction Temperature
0
25
50
75
100
125
150
175
200
225
250
0
50
100
150
200
250
300
350
400
450
500
550
600
AP2138-3.3
Dr
opo
ut Vol
tage
(
mV)
Output Current (mA)
T
J
=-40
o
C
T
J
=25
o
C
T
J
=85
o
C
-40
-20
0
20
40
60
80
0
50
100
150
200
250
300
350
400
450
500
550
I
OUT
=250mA
I
OUT
=200mA
I
OUT
=150mA
I
OUT
=100mA
AP2138-3.3
D
rop
ou
t V
o
ltag
e
(m
V
)
Junction Temperature (
o
C)
I
OUT
=10mA
Figure 14. Line transient (V
IN
=4.3 to 5.3V, I
OUT
=10mA
)
Figure 15. Load transient (V
IN
=4.3V, I
OUT
=1mA to150mA)
V
IN
500mV
V
OUT
200mV/div
V
OUT
1V/div
I
OUT
50mA/div
Time 100
μs/div
Time 2ms/div
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