Diodes AP2138/2139 User Manual
Page 9
9
Jul. 2012 Rev. 2. 3
BCD Semiconductor Manufacturing Limited
Data Sheet
ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Input Voltage
V
IN
6.6
V
Output Voltage
V
OUT
1.470
1.500
1.530
V
Quiescent Current
I
Q
I
OUT
=0
1.0
1.5
μA
Standby Current (AP2139)
I
STD
V
CE
=0
0.1
1
μA
Output Current
I
OUT
250
mA
Load Regulation
V
RLOAD
1mA
≤I
OUT
≤100mA
25
40
mV
Line Regulation
V
RLINE
2.5V
≤V
IN
≤6V
6
18
mV
Dropout Voltage
V
DROP
I
OUT
=10mA
100
300
mV
I
OUT
=30mA
200
400
I
OUT
=100mA
600
900
I
OUT
=250mA
1000
1300
Output Voltage
Temperature Coefficient
ΔV
OUT
/
ΔT
±
150
μV/
o
C
(
ΔV
OUT
/V
OUT
)/
ΔT
±
100
ppm/
o
C
Short Circuit Current
I
SHORT
V
OUT
=0
50
mA
CE Pull-down Constant
Current (AP2139)
I
PD
0.2
μA
CE Input Logic-high
Voltage (AP2139)
V
IH
1.2
V
CE Input Logic-low
Voltage (AP2139)
V
IL
0.3
V
Thermal Resistance
θ
JC
SOT-23-3
81.9
o
C/W
SOT-23-5
81.9
SOT-89
51.1
Electrical Characteristics (Continued)
AP2138/2139-1.5 Electrical Characteristics
(V
IN
=2.5V, V
CE
=2.5V (AP2139),T
J
=25
o
C, I
OUT
=40mA, C
IN
=C
OUT
=1
μF, Bold typeface applies over -40
o
C
≤T
J
≤85
o
C, unless
otherwise specified.)