Diodes AP2138/2139 - Manual (Page 6)

ULTRA LOW QUIESCENT CURRENT CMOS LDO AP2138/2139
Data Sheet
6
Jul. 2012 Rev. 2. 3 BCD Semiconductor Manufacturing Limited
Parameter Symbol Value Unit
Input Voltage V
IN
7.0 V
Enable Input Voltage (AP2139) V
CE
-0.3 to V
IN
+0.3 V
Lead Temperature T
LEAD
260 o C
Junction Temperature T
J
150 o C
Storage Temperature Range T
STG
-65 to 150 o C
ESD (Machine Model) ESD 350 V
ESD (Human Body Model) ESD 2000 V
Thermal Resistance (Note 2) θ
JA
SOT-23-3 250
o C/W
SOT-23-5 250
SOT-89 165
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Note 2: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifica-
tions do not apply when operating the device outside of its operating ratings. The maximum allowable power dissipation is a
function of the maximum junction temperature, T
J(max),
the junction-to-ambient thermal resistance, θ
JA,
and the ambient tem-
perature, T
A.
The maximum allowable power dissipation at any ambient temperature is calculated using: P
D(max)
=(T
J(max)
-
T
A
)/ θ
JA.
Exceeding the maximum allowable power dissipation will result in excessive die temperature.
Absolute Maximum Ratings (Note 1)
Parameter Symbol Min Max Unit
Input Voltage V
IN
2.5 6.6 V
Operating Ambient Temperature Range T
A
-40 85 o C
Recommended Operating Conditions