Electrical characteristics, Switching characteristics, Operating characteristics – Diodes 74HC125 User Manual

Page 4

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74HC125

Document number: DS35326 Rev. 3 - 2

4 of 9

www.diodes.com

January 2013

© Diodes Incorporated

74HC125



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter Test

Conditions V

CC

T

A

= -40°C to +85°C

T

A

= -40°C to +125°C

Unit

Min Max Min Max

V

IH

High-level Input
Voltage

2.0V

1.5 1.5

V

4.5V

3.15 3.15

6.0V

4.2 4.2

V

IL

Low-level Input
voltage

2.0V

0.5 0.5

V

4.5V 1.35 1.35

6.0V

1.8 1.8

V

OH

High-level Output
Voltage

I

OH

= -20μA

2.0V

1.9 1.9

V

I

OH

= -20μA

4.5V

4.4 4.4

I

OH

= -20μA

6.0V

5.9 5.9

I

OH

= -4.0mA

4.5V 3.84

3.7

I

OH

= -5.2mA

6.0V 5.34

5.2

V

OL

Low-level Output
Voltage

I

OL

= 20μA

2.0V

0.1 0.1

V

I

OL

= 20μA

4.5V

0.1 0.1

I

OL

= 20μA

6.0V

0.1 0.1

I

OL

= 4mA

4.5V 0.33 0.44

I

OL

= 5.2mA

6.0V 0.33 0.44

I

OZ

Z State
Leakage Current

V

O

= 0 to 6.0V

V

I

= GND or 6.0V

6.0V

± 5.0

± 10

μA

I

I

Input Current

V

I

= GND to 5.5V

6.0V

±

1 ±

1

μA

I

CC

Supply Current

V

I

= GND or V

CC

, I

O

= 0

6.0V

20 40

μA


Switching Characteristics

Symbol

Parameter

Test

Conditions

V

CC

T

A

= +25°C

-40°C to +85°C

-40°C to +125°C

Unit

Min Typ. Max

Max

Max

t

PD

Propagation
Delay A

N

to Y

N

Figure 1

C

L

= 50 pF

2.0V — 30

100 125

150

ns

4.5V

11

20

25

30

6.0V — 9 17

21

26

t

EN


Enable Time
OE

N

to Y

N

Figure 1

C

L

= 50 pF

2.0V —

41 125

155

190

ns

4.5V

15 25

31

38

6.0V

12 21

26

32

t

DIS


Disable Time
OE

to Y

N

Figure 1

C

L

= 50 pF

2.0V

41 125

155

190

ns

4.5V

15 25

31

38

6.0V

12 21

26

32

t

t

Transition time

Figure 1

C

L

= 50 pF

2.0V

14 60

75

90

ns

4.5V

5 12

15

18

6.0V

4 10

13

15



Operating Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Parameter Test

Conditions

V

CC

= 6V

Unit

Typ

C

pd

Power Dissipation

Capacitance per Gate

f = 1MHz

22

pF

C

I

Input Capacitance

V

I

= V

CC

– or GND

4 pF


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