Electrical characteristics, Fzt1051a, A product line of diodes incorporated – Diodes FZT1051 User Manual

Page 4

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FZT1051A

Document Number DS33184 Rev.5 - 2

4 of 7

www.diodes.com

August 2013

© Diodes Incorporated

FZT1051A

A Product Line of

Diodes Incorporated





Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

150 190

V

I

C

= 100µA

Collector-Emitter Breakdown Voltage

BV

CES

150 190

V

I

C

= 100µA

Collector-Emitter Breakdown Voltage

BV

CEV

150 190

V

I

C

= 100µA, V

EB

= 1V

Collector-Emitter Breakdown Voltage (Note 11)

BV

CEO

40 60

V

I

C

= 10mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.1

V

I

E

= 100µA

Collector Cut-off Current

I

CBO




<1



10

0.5

nA
µA

V

CB

= 120V

V

CB

= 120V, T

A

= +100°C

Collector Cut-off Current

I

CES



<1

10 nA

V

CB

= 120V

Emitter Cut-off Current

I

EBO

<1 10 nA

V

EB

= 6V

Collector-Emitter Saturation Voltage (Note 11)

V

CE(sat)

17

25

mV

I

C

= 200mA, I

B

= 10mA



85 120

I

C

= 1A, I

B

= 10mA



140 180

I

C

= 2A, I

B

= 20mA



250 340

I

C

= 5A, I

B

= 100mA

Base-Emitter Saturation Voltage (Note 11)

V

BE(sat)

980

1100 mV

I

C

= 5A, I

B

= 100mA

Base-Emitter Turn-On Voltage (Note 11)

V

BE(on)

915 1000 mV I

C

= 5A, V

CE

= 2V

DC Current Gain (Note 11)

h

FE

290 440

I

C

= 10mA, V

CE

= 2V

270 450 1200

I

C

= 1A, V

CE

= 2V

130 220



I

C

= 5A, V

CE

= 2V

40 55



I

C

= 10A, V

CE

= 2V

Output Capacitance

C

obo

27 40 pF

V

CB

= 10V, f = 1MHz

Current Gain-Bandwidth Product

f

T

155

MHz

V

CE

= 10V, I

C

= 50mA,

f = 100MHz

Switching Times

t

on



220

ns

I

C

= 3A, V

CC

= 10V,

I

B1

= -I

B2

= 30mA

t

off



540

Notes:

11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%





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