Diodes DMG1012UW User Manual
Dmg1012uw, Features, Mechanical data
DMG1012UW
Document number: DS31859 Rev. 3 - 2
1 of 6
September 2013
© Diodes Incorporated
DMG1012UW
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
ESD Protected Up To 2KV
•
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-323
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram Below
•
Terminals: Finish
⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
•
Weight: 0.006 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMG1012UW-7
SOT-323
3000 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
TOP VIEW
Source
EQUIVALENT CIRCUIT
Gate
Protection
Diode
Gate
Drain
TOP VIEW
G
S
D
ESD PROTECTED TO 2kV
NA1 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y
or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
NA1
Y
M
Chengdu A/T Site
Shanghai A/T Site
e3