Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG1012UW User Manual

Page 2: Dmg1012uw

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DMG1012UW

Document number: DS31859 Rev. 3 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG1012UW





Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

20

V

Gate-Source Voltage

V

GSS

±6

V

Continuous Drain Current (Note 5)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

1.0

0.64

A

Pulsed Drain Current (Note 6)

I

DM

6

A



Thermal Characteristics

Characteristic

Symbol

Max

Unit

Power Dissipation (Note 3)

P

D

0.29

W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 3)

R

θJA

425

°C/W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

-

-

V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

-

-

100

nA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-

-

±1.0

μA

V

GS

= ±4.5V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

-

1.0

V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-

0.3

0.45

V

GS

= 4.5V, I

D

= 600mA

0.4

0.6

V

GS

= 2.5V, I

D

= 500mA

0.5

0.75

V

GS

= 1.8V, I

D

= 350mA

Forward Transfer Admittance

|Y

fs

|

-

1.4

-

S

V

DS

= 10V, I

D

= 400mA

Diode Forward Voltage

V

SD

-

0.7

1.2

V

V

GS

= 0V, I

S

= 150mA

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

-

60.67

-

pF

V

DS

= 16V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

-

9.68

-

pF

Reverse Transfer Capacitance

C

rss

-

5.37

-

pF

Total Gate Charge

Q

g

-

736.6

-

pC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 250mA

Gate-Source Charge

Q

gs

-

93.6

-

pC

Gate-Drain Charge

Q

gd

-

116.6

-

pC

Turn-On Delay Time

t

D(on)

-

5.1

-

ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 47

Ω, R

G

= 10

Ω,

I

D

= 200mA

Turn-On Rise Time

t

r

-

7.4

-

ns

Turn-Off Delay Time

t

D(off)

-

26.7

-

ns

Turn-Off Fall Time

t

f

-

12.3

-

ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.














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