Diodes DMG1012UW - Manual (Page 4)

DMG1012UW
Document number: DS31859 Rev. 3 - 2
4 of 6
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September 2013
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DMG1012UW
0
0.4
0.8
1.2
1.6
V
,
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(T
H
)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = 250µA
D
0.2 0.4 0.6 0.8 1.0 1.2
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0
2
4
6
8
10
I
,
S
O
U
R
C
E
C
U
R
R
E
N
T
(
A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
A
N
C
E
(
p
F
)
C
iss
C
oss
C
rss
1
10
100
1,000
0 4 8 12 16 20
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
I
,
D
R
A
IN
-S
O
U
R
C
E
L
E
A
K
A
G
E
C
U
R
R
E
N
T
(
n
A
)
D
S
S
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
0.001
0.01
0.1
1
r(
t)
,
T
R
A
N
S
IE
N
T
T
H
E
R
M
A
L
R
E
S
IS
T
A
N
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 486°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1