Diodes DMG5802LFX User Manual

Dmg5802lfx, Product summary, Description

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DMG5802LFX

Document number: DS35009 Rev. 5 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

DMG5802LFX

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

I

D

T

A

= +25°C

24V

15mΩ @ V

GS

= 4.5V

6.5A

20mΩ @ V

GS

= 2.5V

5.6A

Description

This new generation MOSFET has been designed to minimize the on-
state resistance (R

DS(on)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management
applications.

Applications

 DC-DC

Converters

Power management functions

Features

 Low

On-Resistance

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

ESD Protected up to 3kV

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case:

W-DFN5020-6

Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram Below

Weight: 0.03 grams (approximate)




















Ordering Information

(Note 4)

Part Number

Case

Packaging

DMG5802LFX-7

W-DFN5020-6

3000 / Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information








Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

2017

2018

Code X Y Z A B C D E F

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Equivalent Circuit

Top View

W-DFN5020-6

ESD PROTECTED TO 3kV

ME = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)

Bottom View

S1

S1

G1

S2

S2

G2

D1/D2

Top View

Pin-Out

ME

YM

D1

S1

G1

D2

S2

G2

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