Diodes DMG5802LFX - Manual (Page 2)

DMG5802LFX
Document number: DS35009 Rev. 5 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG5802LFX
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
24 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.5
5.2
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.6
4.5
A
Pulsed Drain Current (Note 6) I
DM
70 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P
D
0.98 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
126.5 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
24 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 μA V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.6 0.9 1.5 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
— 11 15
mΩ
V
GS
= 4.5V, I
D
= 6.5A
— 12 17 V
GS
= 4V, I
D
= 5.6A
— 13 18 V
GS
= 3.1V, I
D
= 5.6A
— 14 20 V
GS
= 2.5V, I
D
= 5.6A
Forward Transfer Admittance |Y
fs
| — 17 — S V
DS
= 5V, I
D
= 6.5A
Diode Forward Voltage V
SD
— 0.6 0.9 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 1066.4 —
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 132.0 —
Reverse Transfer Capacitance C
rss
— 127.1 —
Gate Resistance R
g
— 1.47 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge V
GS
= 4.5V Q
g
— 14.5 —
nC
V
GS
= 4.5V, V
DS
= 15V, I
D
= 5.8A
Total Gate Charge V
GS
= 10V Q
g
— 31.3 —
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
Gate-Source Charge Q
gs
— 2.0 —
Gate-Drain Charge Q
gd
— 3.1 —
Turn-On Delay Time t
D(on)
— 3.69 — ns
V
GS
= 10V, V
DS
= 15V,
R
L
= 2.1Ω, R
G
= 3Ω
Turn-On Rise Time t
r
— 13.43 — ns
Turn-Off Delay Time t
D(off)
— 32.18 — ns
Turn-Off Fall Time t
f
— 22.45 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.