Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG5802LFX User Manual

Page 2: Dmg5802lfx

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DMG5802LFX

Document number: DS35009 Rev. 5 - 2

2 of 6

www.diodes.com

November 2013

© Diodes Incorporated

DMG5802LFX

Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

24 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 5) V

GS

= 4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

6.5
5.2

A

Continuous Drain Current (Note 5) V

GS

= 2.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

5.6
4.5

A

Pulsed Drain Current (Note 6)

I

DM

70 A




Thermal Characteristics

Characteristic Symbol

Max

Unit

Power Dissipation (Note 5)

P

D

0.98 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C (Note 5)

R

θJA

126.5 °C/W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

24 — — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — 1.0 μA

V

DS

= 24V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— — ±10 μA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.6 0.9 1.5 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

— 11 15

mΩ

V

GS

= 4.5V, I

D

= 6.5A

— 12 17

V

GS

= 4V, I

D

= 5.6A

— 13 18

V

GS

= 3.1V, I

D

= 5.6A

— 14 20

V

GS

= 2.5V, I

D

= 5.6A

Forward Transfer Admittance

|Y

fs

|

— 17 — S

V

DS

= 5V, I

D

= 6.5A

Diode Forward Voltage

V

SD

— 0.6 0.9 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 1066.4

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 132.0 —

Reverse Transfer Capacitance

C

rss

— 127.1 —

Gate Resistance

R

g

— 1.47 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge V

GS

= 4.5V

Q

g

— 14.5 —

nC

V

GS

= 4.5V, V

DS

= 15V, I

D

= 5.8A

Total Gate Charge V

GS

= 10V

Q

g

— 31.3 —

V

GS

= 10V, V

DS

= 15V,

I

D

= 5.8A

Gate-Source Charge

Q

gs

— 2.0 —

Gate-Drain Charge

Q

gd

— 3.1 —

Turn-On Delay Time

t

D(on)

— 3.69 — ns

V

GS

= 10V, V

DS

= 15V,

R

L

= 2.1Ω, R

G

= 3Ω

Turn-On Rise Time

t

r

— 13.43 — ns

Turn-Off Delay Time

t

D(off)

— 32.18 — ns

Turn-Off Fall Time

t

f

— 22.45 — ns

Notes:

5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.







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