Diodes DMN2009LSS - Manual

DMN2009LSS
Document number: DS31409 Rev. 6- 2
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated
DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low
On-Resistance
• 8mΩ @ V
GS
= 10V
• 9mΩ @ V
GS
= 4.5V
• 12mΩ @ V
GS
= 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case:
SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±12
V
Drain Current (Note 1) Steady
State T
A
= 25°C
T A = 70°C
I
D
12
9.6
A
Pulsed Drain Current (Note 3) I
DM
42 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) P D
2 W
Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 1. Device mounted on 2 oz, FR-4 PCB, with R θJA = 62.5°C/W
2. No purposefully added lead.
3. Pulse width
≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SO-8
TOP VIEW
Internal Schematic
TOP VIEW
S
D
D
G
D
D
S
S