Electrical characteristics, Dmn2009lss – Diodes DMN2009LSS User Manual
Page 2
DMN2009LSS
Document number: DS31409 Rev. 6- 2
2 of 5
June 2010
© Diodes Incorporated
DMN2009LSS
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20
⎯
⎯
V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
1
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±100
nA
V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
0.5
⎯
1.2 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
⎯
8
9
12
m
Ω
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 10A
V
GS
= 2.5V, I
D
= 8A
Forward Transconductance
g
fs
⎯
27
⎯
S
V
DS
= 5V, I
D
= 6.5A
Diode Forward Voltage (Note 5)
V
SD
0.5 0.7 1.2 V
V
GS
= 0V, I
S
= 3A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
2555
⎯
pF
V
DS
= 10V, V
GS
= 0V, f = 1.0MHz
Output Capacitance
C
oss
⎯
523
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
496
⎯
pF
Gate Resistance
R
G
⎯
1.1
⎯
Ω
V
GS
= 0V V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
g
⎯
28.9
58.3
⎯
nC
V
DS
= 10V, V
GS
= 4.5V, I
D
= 12A
V
DS
= 10V, V
GS
= 10V, I
D
= 12A
Gate-Source Charge
Q
gs
⎯
3.7
⎯
V
DS
= 10V, V
GS
= 10V, I
D
= 12A
Gate-Drain Charge
Q
gd
⎯
11.4
⎯
V
DS
= 10V, V
GS
= 10V, I
D
= 12A
Notes:
5. Short duration pulse test used to minimize self-heating effect.
0
1
2
3
4
5
Fig. 1 Typical Output Characteristics
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
5
10
15
20
25
30
V
= 2.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 1.5V
GS
V
= 3.0V
GS
V
= 4.0V
GS
V
= 5V
DS
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
5
10
15
20
25
30
0.4
0.6
0.8
1
1.2
1.4
1.6
V
= 10V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A