Dmn2009lss – Diodes DMN2009LSS User Manual
Page 3
DMN2009LSS
Document number: DS31409 Rev. 6- 2
3 of 5
June 2010
© Diodes Incorporated
DMN2009LSS
Fig. 3 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
,
DRAIN-
T
O-
SOURC
E RES
IST
ANCE
(
)
DS
(O
N)
Ω
0
0.005
0.01
0.015
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 8A
GS
D
V
= 10V
I = 12A
GS
D
Fig. 4 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAIN-
T
O-
SOUR
CE
RESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
(O
N)
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V
= 2.5V
I = 8A
GS
D
V
= 4.5V
I = 10A
GS
D
V
= 10V
I = 12A
GS
D
C, CAP
A
CIT
A
NCE
(p
F
)
Fig. 5 Typical Capacitance
V
, DRAIN-SOURCE VOLTAGE (V)
DS
100
1,000
10,000
0
4
8
12
16
20
C
iss
C
oss
C
rss
V
, G
A
TE
T
HRE
SHO
L
D VO
L
T
AG
E
(
V
)
GS
(T
H
)
Fig. 6 Gate Threshold Variation vs. Ambient Temperature
T , AMBIENT TEMPERATURE (°C)
A
-50
-25
0
25
50
75
100
125 150
0
0.2
0.4
0.6
0.8
1.0
I = 250µA
D
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
Fig. 7 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
100
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A