Diodes DMN2215UDM User Manual
Features, Mechanical data, Maximum ratings
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated
DMN2215UDM
N
EW
P
R
O
D
U
C
T
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Dual N-Channel MOSFET
•
Low On-Resistance
•
100m
Ω @V
GS
= 4.5V, I
D
= 2.5A
•
140m
Ω @V
GS
= 2.5V, I
D
= 1.5A
•
215m
Ω @V
GS
= 1.8V, I
D
= 1A
•
Very Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate to 2kV HBM
•
Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOT-26
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminal Connections: See Diagram
•
Terminals: Finish
⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 4
•
Ordering Information: See Page 4
•
Weight: 0.015 grams (approximate)
SOT-26
TOP VIEW
Schematic and Pin Configuration
S
1
D
1
D
2
S
2
G
1
G
2
TOP VIEW
ESD PROTECTED TO 2kV
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Drain Current (Note 1)
T
A
= 25°C
T
A
= 85°C
I
D
2.0
1.4
A
Pulsed Drain Current ( Note 4)
I
DM
7.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 1)
P
D
650
mW
Thermal Resistance, Junction to Ambient
R
θJA
192
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width
≤ 10μs, duty cycle ≤ 1%.