Diodes DMN2215UDM - Manual (Page 2)

DMN2215UDM
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current
IDSS
⎯ ⎯ 1 μA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
IGSS
⎯ ⎯ ±10 μA V
GS
=
±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
0.6 ⎯ 1.0 V V DS = V CS , I D = 250
μA
V
GS
= 4.5V, I
D
= 2.5A
V
GS
= 2.5V, I
D
= 1.5A Static Drain-Source On-Resistance R
DS (ON)
⎯
80
105
165
100
140
215
m Ω
V
GS
= 1.8V, I
D
= 1.0A
Forward Transfer Admittance |Y fs |
⎯ 5 ⎯ S V DS =5V, I D = 2.4A
Diode Forward Voltage (Note 5) V
SD
⎯ 0.73 1.1 V V
GS
= 0V, I
S
= 1.05A
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
⎯ 188 ⎯ pF
Output Capacitance C
oss
⎯ 44 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 30 ⎯ pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Turn-On Delay Time t d(on)
⎯ 8 ⎯
Rise Time t
r
⎯ 3.8 ⎯
Turn-Off Delay Time t
d(off)
⎯ 19.6 ⎯
Fall Time t
t
⎯ 8.3 ⎯
ns
V
DD
= 10V, R
L
= 10
Ω
I
D
= 1A, V
GEN
= 4.5V, R
G
= 6
Ω
NEW PRODUCT
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
0 0.5 1 1.5 2 2.5 3 3.5 4
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
2 of 4
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June 2008
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