Diodes DMN2215UDM - Manual (Page 3)

DMN2215UDM
Fig. 3 On-Resistance vs.
Drain-Source Current & Gate Voltage
I , DRAIN-SOURCE CURRENT
D
R
, S
T
A
T
IC DRA
IN-
S
OURCE
ON-
R
ESIS
T
A
NCE (
)
DS
(O
N
)
Ω
V = 1.8V
GS
V = 2.5V
GS
V = 4.5V
GS
0.01
0.1
1
0.01 0.1 1 10
Fig. 4 Normalized Static Drain-Source On-Resistance
vs. Ambient Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 25 50 150
T , AMBIENT TEMPERATURE (°C)
A
R
NO
RM
A
L
IZ
E
D
DS
(O
N
)
V = 2.5V
I = 1.5A
GS
D
V = 4.5V
I = 2.5A
GS
D
V = 1.8V
I = 1.0A
GS
D
0 75 12 100 5
Fig. 5 Gate Threshold Variation with Temperature
0
0.2
0.4
0.6
0.8
1
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (C)
A
V
, G
A
TE
T
HRESHO
L
D VO
L
T
A
G
E
(
V
)
GS
(T
H
)
I = 250µA
D
Fig. 6 Typical Total Capacitance
10
100
1,000
0 2 4 6 8 10 12 14 16 18 20
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
T
O
T
AL
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
oss
C
rss
f = 1MHz
Fig. 7 Reverse Drain Current vs. Source-Drain Voltage
0.0001
0.001
0.01
0.1
1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
NEW PRODUCT
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
3 of 4
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June 2008
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