Diodes DMN2501UFB4 - Manual (Page 2)

DMN2501UFB4
Document number: DS35824 Rev. 3 - 2
2 of 6
www.diodes.com
August 2012
© Diodes Incorporated
DMN2501UFB4
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T A = 25°C
T
A
= 70°C
I D
1.0
0.8
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
1.2
0.9
A
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T A = 70°C
I D
1.5
1.2
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
1.8
1.4
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
6 A
Maximum Body Diode continuous Current I S
1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.5
W
T
A
= 70°C 0.3
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
251
°C/W
t<10s 188
Total Power Dissipation (Note 6)
T
A
= 25°C
P D
1.2
W
T
A
= 70°C 0.7
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
110
°C/W
t<10s 82
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T J = 25°C I DSS
- - 100 nA V DS = 20V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±1 μA
V
GS
= ±6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 0.76 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
170 400
mΩ
V
GS
= 4.5V, I
D
= 600mA
200 500 V
GS
= 2.5V, I
D
= 500mA
260 700 V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance |Y
fs
| - 1.4 - S V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage V
SD
0.7 1.2 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 82 - pF
V
DS
=16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 12 - pF
Reverse Transfer Capacitance C rss
- 10 - pF
Gate resistance R
g
- 83 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
- 1.1 - nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge (V GS = 10V) Q g
- 2.0 - nC
Gate-Source Charge Q
gs
- 0.14 - nC
Gate-Drain Charge Q
gd
- 0.19 - nC
Turn-On Delay Time t D(on)
- 6.6 - ns
V
DD
= 10V, V
GS
= 4.5V,
R L = 47 Ω, R
G = 10 Ω,
I D = 200mA
Turn-On Rise Time t
r
- 6.4 - ns
Turn-Off Delay Time t
D(off)
- 40.4 - ns
Turn-Off Fall Time t
f
- 17.3 - ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.