Diodes DMN3033LSD User Manual

Dmn3033lsd, Product summary, Description

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DMN3033LSD

Document number: DS31262 Rev. 9 - 2

1 of 6

www.diodes.com

February 2014

© Diodes Incorporated

DMN3033LSD

D1

S1

G1

D2

S2

G2

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

max

I

D

max

T

A

= +25°C

30V

20mΩ @ V

GS

= 10V

6.9A

27mΩ @ V

GS

= 4.5V

5.8A


Description

This MOSFET has been designed to minimize the on-state resistance
(R

DS(on)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Applications

 Backlighting

Power Management Functions

 DC-DC

Converters

Features

 Dual

N-Channel

MOSFET

 Low

On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Low Input/Output Leakage

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case:

SO-8

Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals Connections: See Diagram

Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208

Weight: 0.072grams (approximate)















Ordering Information

(Note 4)

Part Number

Case

Packaging

DMN3033LSD-13

SO-8

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html


Marking Information












SO-8

Top View

Top View

Internal Schematic

S1

D2

S2

D1

G2

G1

D1

D2

N-channel MOSFET

N-channel MOSFET

1

4

8

5

N3033LD

YY WW

Shanghai A/T Site

1

4

8

5

N3033LD

YY

WW

Chengdu A/T Site

= Manufacturer’s Marking
N3033LD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)

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