Diodes DMN3033LSD - Manual (Page 4)

DMN3033LSD
Document number: DS31262 Rev. 9 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN3033LSD
0
2
4
6
8
10
0 2 4 6 8 10 12 14
Q - TOTAL GATE CHARGE (nC)
Fig. 7 Gate Charge
g
V,
G
AT
E
-S
O
U
R
C
E V
O
LTA
G
E (
V
)
GS
I = 7A
D
I = 9A
D
V
, G
A
TE TH
R
ESHO
L
D VO
LT
AG
E
(
V
)
GS
(T
H
)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
1
1.3
1.6
1.9
2.2
2.5
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
Fig. 9 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001
0.01
0.1
1
r(t)
, T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ESI
S
TAN
C
E
Fig. 10 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2

R (t) = r(t) *
JA
R
R = 105°C/W


JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9