Diodes DMN3033LSD - Manual (Page 2)

DMN3033LSD
Document number: DS31262 Rev. 9 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN3033LSD
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
20 V
Drain Current (Note 5) Steady
State T
A
= +25°C
T
A
= +70°C
I
D
6.9
5.8
A
Pulsed Drain Current (Note 6) I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
2 W
Thermal Resistance, Junction to Ambient R
θJA
62.5 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
  100 nA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
  1 μA V
GS
= 25V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1  2.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)

13
22 20
27
mΩ
V
GS
= 10V, I
D
= 6.9A
V
GS
= 4.5V, I
D
= 5A
Forward Transconductance g
fs
 7  S V
DS
=5V, I
D
= 6.9A
Diode Forward Voltage (Note 7) V
SD
0.5  1.2 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
 725  pF
V
DS
= 15V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 114  pF
Reverse Transfer Capacitance C
rss
 92  pF
Gate Resistance R
G
 0.89  Ω V
GS
= 0V, V
DS
= 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Q
g

6.4
13
 nC
V
GS
= 4.5V, V
DS
= 15V, I
D
=5A
V
GS
= 10V, V
DS
= 15V, I
D
= 6.9A
Gate-Source Charge Q
gs
 1.9  nC V
GS
= 4.5V, V
DS
= 15V, I
D
= 6.9A
Gate-Drain Charge Q
gd
 3.2  nC V
GS
= 4.5V, V
DS
= 15V, I
D
= 6.9A
Turn-On Delay Time t
d(on)
 11  ns
V
DD
= 15V, V
GS
= 10V,
R
D
= 1.8Ω, R
G
= 6Ω
Turn-On Rise Time t
r
 7  ns
Turn-Off Delay Time t
d(off)
 63  ns
Turn-Off Fall Time t
f
 30  ns
Notes: 5. Device mounted on 2 oz. Copper pads on FR-4 PCB with R
θJA
= 62.5°C/W
6. Pulse width 10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.