Diodes DMN3200U User Manual
Dmn3200u new prod uc t, Features, Mechanical data
DMN3200U
Document number: DS31188 Rev. 5 - 2
1 of 5
October 2013
© Diodes Incorporated
DMN3200U
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Low
On-Resistance
90
m
@ V
GS
= 4.5V
110
m
@ V
GS
= 2.5V
200
m
@ V
GS
= 1.5V
Very Low Gate Threshold Voltage
Low Input Capacitance
ESD
Protected
Gate
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case:
SOT-23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals:
Finish
Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
Ordering Information
(Note 4)
Part Number
Case
Packaging
DMN3200U-7
SOT-23
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at
Marking Information
Date Code Key
Year
2007
2008
2009
2010
2011
2012
2013
2014
2015 2016 2017
Code U V W X Y Z A B C D E
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT-23
TOP VIEW
Equivalent Circuit
TOP VIEW
Source
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 3kV
D
G
S
32N = Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
32N
YM
Chengdu A/T Site
Shanghai A/T Site
e3
Y
YM
32N
YM