Diodes DMN3200U - Manual (Page 2)

DMN3200U
Document number: DS31188 Rev. 5 - 2
2 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3200U
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) I
D
2.2 A
Pulsed Drain Current (Note 5) I
DM
9 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
650 mW
Thermal Resistance, Junction to Ambient R
θJA
192 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  5 µA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.45  1.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)

62
70
150
90
110
200 m 
V
GS
= 4.5V, I
D
= 2.2A
V
GS
= 2.5V, I
D
= 2A
V
GS
= 1.5V, I
D
= 0.67A
Forward Transfer Admittance |Y
fs
|  5  S V
DS
=5V, I
D
= 2.2A
Diode Forward Voltage (Note 6) V
SD
  0.9 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
 290  pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 66  pF
Reverse Transfer Capacitance C
rss
 35  pF
Notes: 5. Device mounted on FR-4 PCB, on minimum recommended pad layout on 2oz. Copper pads.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.