Diodes DMN3200U - Manual (Page 3)

DMN3200U
Document number: DS31188 Rev. 5 - 2
3 of 5
www.diodes.com
October 2013
© Diodes Incorporated
DMN3200U
NEW PROD
UC
T
0
1
2
3
4
5
6
7
8
9
10
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
1
2
3
4
5
6
7
8
9
10
0.5 1 1.5 2 2.5 3
T = -55°C
A
T = 25°C
A T = 85°C
A
T = 150°C
A
V = 5V
Pulsed
DS
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0.01
0.1
1
0.01 0.1 1 10
I , DRAIN-SOURCE CURRENT (A)
D
R
, ST
A
T
IC
DRAIN-
S
OURCE
ON-
R
ES
IST
A
NCE
(
)
DS
(O
N)

V = 2.5V
GS
V = 1.5V
GS
V = 4.5V
GS
0.6
0.8
1.2
1.4
1.6
1.8
1.0
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
TH
R
E
SH
O
LD
VO
LT
A
G
E
(
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1.0
I = 250µA
D
0 5 10 15 20 25 30
Fig. 6 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
, C
A
P
A
C
IT
AN
C
E (
pF
)
C
iss
C
oss
C
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