Diodes DMN4800LSS - Manual (Page 2)

DMN4800LSS
Document number: DS31736 Rev. 7 - 2
2 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4800LSS
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
25 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.6
6.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
11.8
9.0
A
Maximum Body Diode Forward Current (Note 6) I
S
2.4 A
Pulsed Drain Current (Note 7) I
DM
50 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.46
W
T
A
= +70°C 0.9
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
JA
86
°C/W
t<10s 46
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
JA
75
°C/W t<10s 40
Thermal Resistance, Junction to Case (Note 6) R
JC
15
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30   V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
  1 μA V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.8 1.2 1.6 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)

11
14 14
20
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transconductance g
fs
 8  S V
DS
= 10V, I
D
= 9A
Diode Forward Voltage (Note 8) V
SD
 0.72 0.94 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
 798  pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
 128  pF
Reverse Transfer Capacitance C
rss
 122  pF
Gate Resistance R
G
 1.37  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q
g
 8.7 
nC V
GS
= 5V, V
DS
= 15V, I
D
= 9A Gate-Source Charge Q
gs
 1.7 
Gate-Drain Charge Q
gd
 2.4 
Turn-On Delay Time t
d(on)
 5.03 
ns
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15Ω R
G
= 6.0Ω I
D
= 1A
Rise Time t
r
 4.50 
Turn-Off Delay Time t
d(off)
 26.33 
Fall Time t
f
 8.55 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.