Dmn4800lss new prod uc t, Dmn4800lss – Diodes DMN4800LSS User Manual
Page 3
DMN4800LSS
Document number: DS31736 Rev. 7 - 2
3 of 6
October 2013
© Diodes Incorporated
DMN4800LSS
NEW PROD
UC
T
0
0.5
1
1.5
2
0
5
10
15
20
30
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
25
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
V
= 2.0V
GS
V
= 3.0V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 2.5V
GS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
5
10
15
20
25
30
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 5V
DS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
5
10
15
20
25
30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AIN-
S
O
URCE ON-
R
ESIS
TA
NCE (
)
DS
(O
N)
V
= 4.5V
GS
V
= 2.5V
GS
0
0.01
0.02
0.03
0
5
10
15
20
25
30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.8
R
, D
R
AI
N-
S
O
U
R
C
E
ON
-R
E
S
IS
TA
N
C
E
(N
OR
MA
L
IZ
E
D
)
DS
O
N
1.6
V
= 4.5V
I = 10A
GS
D
V
= 10V
I = 11.6A
GS
D
0
0.005
0.01
0.015
0.02
0.025
0.03
Fig. 6 On-Resistance Variation with Temperature
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN
-S
OURCE
ON-
R
ESI
ST
ANC
E
(
)
DS
O
N
V
= 10V
I = 11.6A
GS
D
V
= 4.5V
I = 10A
GS
D