Diodes DMN4800LSS - Manual (Page 4)

DMN4800LSS
Document number: DS31736 Rev. 7 - 2
4 of 6
www.diodes.com
October 2013
© Diodes Incorporated
DMN4800LSS
NEW PROD
UC
T
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
THRES
H
O
LD VO
LT
AG
E
(V
)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 5 10 15 20 25 30
10
100
1,000
10,000
C
, C
A
P
A
C
IT
A
N
C
E (
p
F
)
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
iss
C
rss
C
oss
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16
Fig. 10 Total Gate Charge
V,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
G
I = 11.6A
D
I = 9A
D
0 5 10 15 20 25 30
Fig. 11 Typical Leakage Current vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = 150°C
T = 25°C
J(max)
A
V = 10V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W