Diodes DMN62D0SFD - Manual

DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated
DMN62D0SFD
NEW PROD
UC
T
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
I
D
T
A
= 25°C
60V
2 Ω @ V
GS
= 10V 540mA
3 Ω @ V
GS
= 5V 430mA
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R
DS(on)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC
Converters
• Power management functions
•
Battery Operated Systems and Solid-State Relays
• Load
switch
Features and Benefits
• Low
On-Resistance
• Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
ESD Protected Gate to 2kV
• Lead Free/RoHS Compliant (Note 1)
•
Green Device (Note 2)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals: Solderable per MIL-STD-202, Method 208
•
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
•
Weight: 0.005 grams (approximate)
Ordering Information
(Note 3)
Part Number Case Packaging
DMN62D0SFD -7 X1-DFN1212-3 3000/Tape & Reel
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
Year 2007 2008 2009 2010 2011 2012
Code U V W X Y Z
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View Bottom View Equivalent Circuit Top view
Pin-out
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Source
Gate
Protection
Diode
Gate
Drain
Body
Diode
D
S
G
ESD PROTECTED TO 2kV
K62
YM