Dmn62d0sfd new prod uc t, Dmn62d0sfd – Diodes DMN62D0SFD User Manual

Page 3

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DMN62D0SFD

Document number: DS35473 Rev. 3 - 2

3 of 6

www.diodes.com

January 2012

© Diodes Incorporated

DMN62D0SFD

NEW PROD

UC

T


V

, DRAIN-SOURCE VOLTAGE (V)

Fig.1 Typical Output Characteristic

DS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

0.001

0.01

0.1

1

0.1

0.3

0.5

0.7

0.9

1.1

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 2 Maximum Forward Current

vs. Source-Drain Voltage

I,

M

A

X

IM

U

M

F

O

R

WA

R

D

C

U

R

R

EN

T

(A

)

S

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0

0.2

0.4

0.6

0.8

1.0

I , DRAIN CURRENT

D

Fig. 3 Typical On-Resistance vs.

Drain Current and Temperature

R

, DRA

IN-

S

OUR

CE ON-

RE

S

IST

A

NCE (

)

DS

(O

N)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5.0V

GS

0

0.2

0.4

0.6

0.8

1.0

I , DRAIN CURRENT

D

Fig. 4 Typical On-Resistance vs.

Drain Current and Temperature

R

, D

R

AI

N

-S

O

U

R

CE

O

N-

R

E

S

IST

A

NCE (

)

DS

(O

N)

Ω

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 10V

GS

50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 5 On-Resistance Variation with Temperature

J

°

R

, D

R

AI

N-

S

O

U

R

C

E

O

N

-R

ESI

ST

ANCE (

N

O

R

M

A

L

IZED)

DS

(O

N)

V

=

V

I = 150A

GS

D

10

V

=

V

I = 300mA

GS

D

10

V

, G

A

TE

T

HRESHO

L

D VO

L

T

A

G

E (

V

)

GS

(t

h

)

I = 1mA

D

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 6 Gate Threshold Variation vs. Ambient Temperature

J

°

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