Diodes DMG3415UFY4 User Manual
Page 3
DMG3415UFY4
Document number: DS31842 Rev. 4 - 2
3 of 6
December 2009
© Diodes Incorporated
DMG3415UFY4
NEW PROD
UC
T
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
4
8
12
16
20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
,
DRAIN-
S
OURCE ON-
R
ESIS
T
A
NCE (
)
DS
(O
N)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
4
8
12
16
20
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
R
, D
R
AI
N-
S
O
U
R
C
E
ON
-R
E
S
IS
T
A
NC
E
(N
OR
MA
L
IZ
E
D
)
DS
O
N
1.6
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 5A
GS
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURCE
ON-
RESI
ST
ANCE
(
)
DS
O
N
Ω
V
= 4.5V
I = 10A
GS
D
V
= 2.5V
I = 5A
GS
D
0
0.3
0.6
0.9
1.2
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRESHO
L
D VOL
T
A
G
E
(
V
)
GS(
T
H
)
I = 250µA
D
I = 1mA
D
0
2
4
6
8
10
12
14
16
18
20
0.2
0.4
0.6
0.8
1
1.2
Fig. 8 Diode Forward Voltage vs. Current
V
, SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A