Electrical characteristics – Diodes DMG3415UFY4 User Manual

Page 2

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DMG3415UFY4

Document number: DS31842 Rev. 4 - 2

2 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMG3415UFY4

NEW PROD

UC

T





Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage

BV

DSS

-16

V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current T

J

= 25

°C I

DSS

-1.0

μA

V

DS

= -16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10

±500

μA
nA

V

GS

=

±8V, V

DS

= 0V

V

GS

=

±5V, V

DS

= 0V

ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage

V

GS(th)

-0.3 -0.55 -1.0 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

31

39

m

V

GS

= -4.5V, I

D

= -4.0A

40

52

V

GS

= -2.5V, I

D

= -3.5A

51

65

V

GS

= -1.8V, I

D

= -2.0A

Forward Transfer Admittance

|Y

fs

|

7.9

S

V

DS

= -5V, I

D

= -2.5A

DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance

C

iss

281.9

pF

V

DS

= -10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

152.0

pF

Reverse Transfer Capacitance

C

rss

37.9

pF

Gate Resistnace

R

g

250

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge

Q

g

10

nC

V

GS

= -4.5V, V

DS

= -10V, I

D

= -4A

Gate-Source Charge

Q

gs

1.5

nC

Gate-Drain Charge

Q

gd

2.4

nC

Turn-On Delay Time

t

D(on)

79.0

ns

V

DS

= -10V, V

GS

= -4.5V,

R

D

= 2.5

Ω, R

G

= 3.0

Ω

Turn-On Rise Time

t

r

175.2

ns

Turn-Off Delay Time

t

D(off)

884.5

ns

Turn-Off Fall Time

t

f

568

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.






0

1

2

3

4

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

4

8

12

16

20

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 2.0V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.5V

GS

0

4

8

12

16

20

0.5

1

1.5

2

2.5

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS











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