Diodes DMG3407SSN - Manual (Page 2)

DMG3407SSN
Document number: DS35135 Rev. 5 - 2
2 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMG3407SSN
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= 25°C
T A = 70°C
I
D
-4.0
-3.2
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-4.6
-3.6
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-3.3
-2.6
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-3.9
-3.1
A
Pulsed Drain Current (10
μs pulse, duty cycle = 1%)
I
DM
-30 A
Maximum Body Diode Forward Current (Note 5) I
S
-2.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
1.1
W
T A = 70°C 0.7
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
166
°C/W
t<10s 118
Total Power Dissipation (Note 5)
T
A
= 25°C
P D
1.8
W
T
A
= 70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
98
°C/W t<10s 71
Thermal Resistance, Junction to Case (Note 5) R θJC 18
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV DSS
-30 - - V V GS = 0V, I D = -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1 μA
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1.0 -1.5 -2.1 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 39 50
mΩ
V
GS
= -10V, I
D
= -4.1A
- 56 72 V GS = -4.5V, I D = -3.0A
Forward Transfer Admittance |Y
fs
| - 8.2 - S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage V
SD
- -0.75 -1.1 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
466 582 700
pF
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
80 114 148
Reverse Transfer Capacitance C
rss
47 76 105
Gate Resistance R
g
2 5 8 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
10.6 13.3 16
nC
V
GS
= -10V, V
DS
= -15V, I
D
= -4A
Total Gate Charge Q
g
5.2 6.5 8.5
V
GS
= -4.5V, V
DS
= -15V,I
D
= -4A Gate-Source Charge Q
gs
1.3 1.7 2
Gate-Drain Charge Q
gd
1.1 1.9 2.7
Turn-On Delay Time t
D(on)
- 6.0 -
ns
V
GS
= -10V, V
DS
= -15V,
R
L
= 3.6 Ω, R
G
= 3 Ω
Turn-On Rise Time t
r
- 12.9 -
Turn-Off Delay Time t
D(off)
- 35.4 -
Turn-Off Fall Time t
f
- 30.7 -
Reverse Recovery Time t rr
6.8 8.5 10.2 ns
I
F
= 4A, di/dt = 100A/ μs
Reverse Recovery Charge Q
rr
5.5 7.0 8.5 nC
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P
D
is based on t<10s R θJA
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P
D
is based on t<10s R θJA
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.