Diodes DMG3407SSN - Manual (Page 4)

DMG3407SSN
Document number: DS35135 Rev. 5 - 2
4 of 6
www.diodes.com
April 2012
© Diodes Incorporated
DMG3407SSN
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.5
1.0
1.5
2.0
2.5
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
-V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V
)
GS
(T
H
)
0.2 0.4 0.6 0.8 1.0 1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
10
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
10
100
1,000
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
0 5 10 15 20 25 30
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
2 6 10 14 18 22 26 30
-V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
-I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
0.1
1
10
100
1,000
10,000
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0 4 8 12 16
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
0.00001 0.001 0.1 10 1,000
t1, Pulse Duration Time (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
0
50
100
150
200
250
300
350
400
P
,
P
EAK
T
R
A
N
SI
EN
T
P
O
WE
R
(W
)
(p
k
)
Single Pulse
R
= 164 C/W θJA
°
R = R * r
(t) (t) θ θ JA JA
T -T = P * R
J A θJA(t)