Diodes DMC1030UFDB - Manual (Page 2)

DMC1030UFDB
Document number: DS36933 Rev.1 - 2
2 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Q1
N-CHANNEL
Q2
P-CHANNEL
Units
Drain-Source Voltage V
DSS
12 -12 V
Gate-Source Voltage V
GSS
±8 ±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.1
4.1 -3.9
-3.1
A
t < 5s
T
A
= +25°C
T
A
= +70°C
I
D
6.6
5.3 -5.0
-4.0
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
2 -1.7 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
35 -25 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
Steady State
P
D
1.36
W
t < 5s 1.89
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
92
°C/W t < 5s 66
Thermal Resistance, Junction to Case (Note 5) R
θJC
18
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics Q1 N-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
12 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 μA V
DS
= 12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.4 — 1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 17 34
mΩ
V
GS
= 4.5V, I
D
= 4.6A
— 20 40 V
GS
= 2.5V, I
D
= 4.2A
— 24 50 V
GS
= 1.8V, I
D
= 3.8A
— 28 70 V
GS
= 1.5V, I
D
= 1.5A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 4.8A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 1003 — pF
V
DS
= 6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 132 — pF
Reverse Transfer Capacitance C
rss
— 115 — pF
Gate Resistance R
g
— 11.3 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 12.2 — nC
V
DS
= 10V, I
D
= 6.8A
Total Gate Charge (V
GS
= 8V) — 23.1 — nC
Gate-Source Charge Q
gs
— 1.3 — nC
Gate-Drain Charge Q
gd
— 1.5 — nC
Turn-On Delay Time t
D(on)
— 4.4 — ns
V
DD
= 6V, V
GS
= 4.5V,
R
L
= 1.1Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 7.4 — ns
Turn-Off Delay Time t
D(off)
— 18.8 — ns
Turn-Off Fall Time t
f
— 4.9 — ns
Body Diode Reverse Recovery Time trr — 7.6 — nS I
S
= 5.4A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 0.9 — nC I
S
= 5.4A, dI/dt = 100A/μs
Notes: 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.