Dmc1030ufdb – Diodes DMC1030UFDB User Manual
Page 7
DMC1030UFDB
Document number: DS36933 Rev.1 - 2
7 of 9
April 2014
© Diodes Incorporated
DMC1030UFDB
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 20 Typical Junction Capacitance
DS
10
100
1000
10000
0
2
4
6
8
10
12
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 21 Gate-Charge Characteristics
g
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
5
10
15
20
25
V
= -10V
I = -4.7A
DS
D
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22 SOA Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
R
Limited
DS(on)
0.01
0.1
1
10
100
0.1
1
10
100
T
= 150°C
T = 25°C
V
= -4.5V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
t1, PULSE DURATION TIMES (sec)
Figure 23 Transient Thermal Resistance
r(
t)
, T
R
A
N
S
IE
N
T T
H
E
R
M
A
L
R
E
S
IS
TA
N
C
E
R
(t) = r(t) * R
R
= 159°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
D = 0.9