Diodes DMC1030UFDB - Manual (Page 5)

DMC1030UFDB
Document number: DS36933 Rev.1 - 2
5 of 9
www.diodes.com
April 2014
© Diodes Incorporated
DMC1030UFDB
Electrical Characteristics Q2 P-CHANNEL
(@ T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-12 — — V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — -1.0 μA V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS(ON)
— 37 59
mΩ
V
GS
= -4.5V, I
D
= -3.6A
— 48 81 V
GS
= -2.5V, I
D
= -3.1A
— 69 115 V
GS
= -1.8V, I
D
= -2.6A
— 88 215 V
GS
= -1.5V, I
D
= -0.5A
Diode Forward Voltage V
SD
— -0.7 -1.2 V V
GS
= 0V, I
S
= -3.7A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 1028 — pF
V
DS
= -6V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 285 — pF
Reverse Transfer Capacitance C
rss
— 254 — pF
Gate Resistance R
g
— 19.6 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
— 13 — nC
V
DS
= -10V, I
D
= -4.7A
Total Gate Charge (V
GS
= -8V) — 20.8 — nC
Gate-Source Charge Q
gs
— 1.8 — nC
Gate-Drain Charge Q
gd
— 4.5 — nC
Turn-On Delay Time t
D(on)
— 5.6 — ns
V
DD
= -6V, V
GS
= -4.5V,
R
L
= 1.6Ω, R
G
= 1Ω
Turn-On Rise Time t
r
— 12.8 — ns
Turn-Off Delay Time t
D(off)
— 30.7 — ns
Turn-Off Fall Time t
f
— 25.4 — ns
Body Diode Reverse Recovery Time trr — 31.6 — nS I
S
= -3.6A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr — 7.8 — nC I
S
= -3.6A, dI/dt = 100A/μs
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 12 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
V = -0.9V
GS
V = -1.0V
GS
V = -3.5V
GS
V = -4.5V
GS
V = -4.0V
GS
V = -1.5V
GS
V = -1.8V
GS
V = -2.0V
GS
V = -3.0V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 13 Typical Transfer Characteristics
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V = -5.0V
DS