Dmc2038lvt new prod uc t, Electrical characteristics n-channel – q1, Dmc2038lvt – Diodes DMC2038LVT User Manual

Page 3

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DMC2038LVT

Document number: DS35417 Rev. 6 - 2

3 of 10

www.diodes.com

September 2013

© Diodes Incorporated

DMC2038LVT

NEW PROD

UC

T





Electrical Characteristics N-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

— V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current @T

c

= +25°C

I

DSS

— — 1.0

μA

V

DS

=16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7 )
Gate Threshold Voltage

V

GS(th)

0.4 — 1.0 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

27 35

mΩ

V

GS

= 4.5V, I

D

= 4.0A

33 43

V

GS

= 2.5V, I

D

= 2.5A

43 56

V

GS

= 1.8V, I

D

= 1.5A

Forward Transfer Admittance

|Y

fs

|

9 — S

V

DS

= 5V, I

D

= 3.4A

Diode Forward Voltage

V

SD

0.4 — 1.1 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

400 530 pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

70 90 pF

Reverse Transfer Capacitance

C

rss

65 100 pF

Gate Resistance

R

g

1.9

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

5.7

nC

V

DS

= 15V,I

D

= 5.8A

Total Gate Charge (V

GS

= 10V)

Q

g

12 17 nC

Gate-Source Charge

Q

gs

0.7

nC

Gate-Drain Charge

Q

gd

1.4

nC

Turn-On Delay Time

t

D(on)

5 10 ns

V

DS

= 10V, V

GS

= 4.5V,

R

G

= 6Ω, I

DS

= 1A,

Turn-On Rise Time

t

r

8 16 ns

Turn-Off Delay Time

t

D(off)

25 40 ns

Turn-Off Fall Time

t

f

8 16 ns

Notes: 7.

Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.




V , DRAIN -SOURCE VOLTAGE(V)

Fig. 1 Typical Output Characteristics

DS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

0

5

10

15

20

25

30

0

0.5

1

1.5

2

V

=10V

GS

V

=4.5V

GS

V

=4.0V

GS

V

=3.5V

GS

V

=3.0V

GS

V

=2.5V

GS

V

=2.0V

GS

V

=1.5V

GS

V , GATE SOURCE VOLTAGE(V)

Fig. 2 Typical Transfer Characteristics

GS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

0

5

10

15

20

0

0.5

1

1.5

2

2.5

3

T = 150 C

A

T = 125 C

A

T = 85 C

A

T = 25 C

A

T = -55 C

A

V

= 5.0V

DS

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