Dmc2038lvt new prod uc t, Electrical characteristics p-channel – q2, Dmc2038lvt – Diodes DMC2038LVT User Manual

Page 6

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DMC2038LVT

Document number: DS35417 Rev. 6 - 2

6 of 10

www.diodes.com

September 2013

© Diodes Incorporated

DMC2038LVT

NEW PROD

UC

T

Electrical Characteristics P-CHANNEL – Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20

— V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current @T

c

= +25°C

I

DSS

— — -1.0

μA

V

DS

= -16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.4 — -1.0 V

V

DS

= V

GS

, I

D

= -250

A

Static Drain-Source On-Resistance

R

DS (ON)

57 74

mΩ

V

GS

= -4.5V, I

D

= -3.0A

76 110

V

GS

= -2.5V, I

D

= -1.5A

102 168

V

GS

= -1.8V, I

D

= -1.0A

Forward Transfer Admittance

|Y

fs

|

10 — S

V

DS

= -5V, I

D

= -3.0A

Diode Forward Voltage

V

SD

-0.8 -1.0 V

V

GS

= 0V, I

S

= -0.6A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 530 705 pF

V

DS

= -10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

70 95 pF

Reverse Transfer Capacitance

C

rss

60 90 pF

Gate Resistance

R

g

72 - Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= -4.5V)

Q

g

7 10 nC

V

DS

= -15V,I

D

= -6A

Total Gate Charge (V

GS

= -10V)

Q

g

14

nC

Gate-Source Charge

Q

gs

0.95

nC

Gate-Drain Charge

Q

gd

1.2

nC

Turn-On Delay Time

t

D(on)

11 20 nS

V

DS

= -10V, V

GS

= -4.5V,

R

G

= 6Ω, I

S

= -1A,

Turn-On Rise Time

t

r

12 22 nS

Turn-Off Delay Time

t

D(off)

21 34 nS

Turn-Off Fall Time

t

f

13 23 nS

Notes: 7.

Short duration pulse test used to minimize self-heating effec

8. Guaranteed by design. Not subject to product testing.









-V , DRAIN -SOURCE VOLTAGE(V)
Fig. 13 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

EN

T

(A

)

D

0

0.5

1

1.5

2

0

5

10

15

20

-V

=10V

GS

-V

=4.5V

GS

-V

=4.0V

GS

-V

=3.5V

GS

-V

=3.0V

GS

-V

=2.5V

GS

-V

=2.0V

GS

-V

=1.5V

GS

-V , GATE SOURCE VOLTAGE(V)

Fig. 14 Typical Transfer Characteristics

GS

I-

, D

R

AI

N

C

U

R

R

EN

T

(A

)

D

0

5

10

15

20

0

0.5 1

1.5

2

2.5

3

3.5

4

4.5

5

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