Dmc3021lsd new prod uc t, Maximum ratings n-channel – q2, Maximum ratings p-channel – q1 – Diodes DMC3021LSD User Manual

Page 2: Thermal characteristics, Electrical characteristics n-channel – q2, Dmc3021lsd

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DMC3021LSD

Document number: DS32152 Rev. 2 - 2

2 of 8

www.diodes.com

February 2014

© Diodes Incorporated

DMC3021LSD

NEW PROD

UC

T


Maximum Ratings N-CHANNEL – Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

8.5
7.1

A

Pulsed Drain Current (Note 6)

I

DM

26 A


Maximum Ratings P-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

V

DSS

-30 V

Gate-Source Voltage

V

GSS

±20 V

Continuous Drain Current (Note 5)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

-7.0
-4.5

A

Pulsed Drain Current (Note 6)

I

DM

-25 A


Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value Unit

Power Dissipation (Note 5)

P

D

2.5 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

50 °C/W

Operating and Storage Temperature Range

T

J

,

T

STG

-55 to +150

°C


Electrical Characteristics N-CHANNEL – Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

30

— — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — 1.0 µA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

1 1.45 2.1 V

V

DS

= V

GS

, I

C

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)


14 21

mΩ

V

GS

= 10V, I

C

= 7A

18 32

V

GS

= 4.5V, I

C

= 5.6A

Forward Transfer Admittance

|Y

fs

|

8.1 — S

V

DS

= 5V, I

C

= 7A

Diode Forward Voltage (Note 7)

V

SD

0.7 1.0 V V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 767 — pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 110 — pF

Reverse Transfer Capacitance

C

rss

— 105 — pF

Gate Resistance

R

g

— 1.4 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

— 7.8 — nC

V

DS

= 15V, I

D

= 9A

Total Gate Charge (V

GS

= 10V)

Q

g

— 16.1 — nC

Gate-Source Charge

Q

gs

— 1.8 — nC

Gate-Drain Charge

Q

gd

— 2.5 — nC

Turn-On Delay Time

t

D(on)

— 5.0 — ns

V

GS

= 10V, V

DS

= 15V,

R

G

= 6Ω

,

I

D

= 1A

Turn-On Rise Time

t

r

— 4.5 — ns

Turn-Off Delay Time

t

D(off)

— 26.3 — ns

Turn-Off Fall Time

t

f

— 8.55 — ns

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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