Diodes DMC3021LSD - Manual (Page 6)

DMC3021LSD
Document number: DS32152 Rev. 2 - 2
6 of 8
www.diodes.com
February 2014
© Diodes Incorporated
DMC3021LSD
NEW PROD
UC
T
0 5 10 15 20
Fig. 13 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
0
0.02
0.04
0.06
0.10
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
0.08
V = 10V
GS
V = 4.5V
GS
0
0.02
0.04
0.06
0.08
0.10
0 5 10 15 20
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
I , DRAIN CURRENT (A)
Fig. 14 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
V = 10V
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 15 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRAIN-
S
OURCE
ON-
R
ES
IST
A
NCE
(
N
ORM
A
L
IZ
E
D)
DS
(O
N)
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
Fig. 16 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
0
0.01
0.02
0.03
0.04
0.05
0.08
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
Ω
0.07
0.06
V = 10V
I = 10A
GS
D
V = 4.5V
I = 5A
GS
D
0
0.5
1.0
1.5
2.0
2.5
Fig. 17 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE
T
HRESHO
L
D VOL
TA
G
E (
V
)
GS
(T
H
)
I = 1mA
D
I = 250µA
D
0.4 0.6 0.8 1.0 1.2 1.4
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 18 Diode Forward Voltage vs. Current
0
4
8
12
16
20
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A