Dmc3021lsd new prod uc t, Electrical characteristics p-channel – q1, Dmc3021lsd – Diodes DMC3021LSD User Manual

Page 5

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DMC3021LSD

Document number: DS32152 Rev. 2 - 2

5 of 8

www.diodes.com

February 2014

© Diodes Incorporated

DMC3021LSD

NEW PROD

UC

T




Electrical Characteristics P-CHANNEL – Q1

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 — — V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — -1.0 µA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100 nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1 -1.7 -2.2 V

V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS(ON)


30 39

mΩ

V

GS

= -10V, I

D

= -4.3A

42 53

V

GS

= -4.5V, I

D

= -3.7A

Forward Transfer Admittance

|Y

fs

|

7 — S

V

DS

= -5V, I

D

= -4.3A

Diode Forward Voltage (Note 7)

V

SD

-0.75 -1.0

V V

GS

= 0V, I

S

= -1.7A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

— 1002 — pF

V

DS

= -10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

— 125 — pF

Reverse Transfer Capacitance

C

rss

— 118 — pF

Gate Resistance

R

g

— 13 — Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

— 10.1 — nC

V

DS

= -15V, I

D

= -6A

Total Gate Charge (V

GS

= 10V)

Q

g

— 21.1 — nC

Gate-Source Charge

Q

gs

— 2.8 — nC

Gate-Drain Charge

Q

gd

— 3.2 — nC

Turn-On Delay Time

t

D(on)

— 10.1 — ns

V

GS

= -10V, V

DS

= -15V,

R

G

= 6Ω , I

D

= -1A

Turn-On Rise Time

t

r

— 6.5 — ns

Turn-Off Delay Time

t

D(off)

— 50.1 — ns

Turn-Off Fall Time

t

f

— 22.2 — ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.




0

5

10

15

20

0 0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

Fig. 11 Typical Output Characteristics

V , DRAIN-SOURCE VOLTAGE (V)

DS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.5V

GS

V

= 10V

GS

V

= 3.5V

GS

V

= 4.0V

GS

0

5

10

15

20

0

1

2

3

4

5

6

Fig. 12 Typical Transfer Characteristics

V , GATE SOURCE VOLTAGE (V)

GS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 5V

DS

T = -55°C

A

T = 25°C

A

T = 125°C

A

T = 150°C

A

T = 85°C

A









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