Dmg6601lvt advance informtion, Electrical characteristics, N channel - q1 – Diodes DMG6601LVT User Manual

Page 3: Dmg6601lvt

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DMG6601LVT

Document number: DS35405 Rev. 4 - 2

3 of 9

www.diodes.com

August 2013

© Diodes Incorporated

DMG6601LVT

ADVANCE INFORMTION


Electrical Characteristics

-

Q2

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 - - V

V

GS

= 0V, I

D

= -250μA

Zero Gate Voltage Drain Current @T

J

= +25°C

I

DSS

- - -1 μA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.4 -0.8 -1.2 V V

DS

= V

GS

, I

D

= -250μA

Static Drain-Source On-Resistance

R

DS (ON)

- 70

110

mΩ

V

GS

= -10V, I

D

= -2.3A

- 81

142

V

GS

= -4.5V, I

D

= -2A

105

190

V

GS

= -2.5V, I

D

= -1A

Forward Transfer Admittance

|Y

fs

|

- 5.3 - S

V

DS

= -5V, I

D

= -2.3A

Diode Forward Voltage (Note 7)

V

SD

- -0.8

-1.0 V

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

- 541 - pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 46 - pF

Reverse Transfer Capacitance

C

rss

- 43 - pF

Gate resistance

R

g

- 16.9 - Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (V

GS

= -4.5V)

Q

g

- 6.5 - nC

V

GS

= -10V, V

DS

= -15V,

I

D

= -2.3A

Total Gate Charge (V

GS

= -10V)

Q

g

13.8 - nC

Gate-Source Charge

Q

gs

- 1.0 - nC

Gate-Drain Charge

Q

gd

- 1.6 - nC

Turn-On Delay Time

t

D(on)

- 1.7 - ns

V

DS

= -15V, V

GS

= -10V,

R

L

= 6Ω, R

G

= 3Ω,

Turn-On Rise Time

t

r

- 4.6 - ns

Turn-Off Delay Time

t

D(off)

- 18.3 - ns

Turn-Off Fall Time

t

f

- 2.2 - ns

Notes:

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.




N Channel - Q1









12

16

20

0

0.5

1.0

1.5

2.0

0

4

8

V , DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristic

DS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

V

= 2.5V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.0V

GS

V

= 4.5V

GS

V

= 5.0V

GS

V

= 10V

GS

V

= 2.0V

GS

0

5

10

15

20

0

1

2

3

4

V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 2 Typical Transfer Characteristics

I,

D

R

AI

N

C

U

R

R

ENT (

A

)

D

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

V

= 5.0V

DS

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