Diodes DMG6601LVT - Manual (Page 5)

DMG6601LVT
Document number: DS35405 Rev. 4 - 2
5 of 9
www.diodes.com
August 2013
© Diodes Incorporated
DMG6601LVT
ADVANCE INFORMTION
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
ENT (
A
)
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
1,000
100
10
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 Typical Junction Capacitance
C
iss
C
oss
C
rss
f = 1MHz
0 2 4 6 8 10 12 14
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
Q (nC)
g
, TOTAL GATE CHARGE
Fig. 11 Gate Charge
V = 15V
I = A
DS
D
3.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Transient Thermal Resistance
0.001
0.01
0.1
1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
R (t) = r(t) * R
R = 143°C/W
Duty Cycle, D = t1/ t2
 

JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse