Dmg6601lvt advance informtion, P channel - q2, Dmg6601lvt – Diodes DMG6601LVT User Manual

Page 6

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DMG6601LVT

Document number: DS35405 Rev. 4 - 2

6 of 9

www.diodes.com

August 2013

© Diodes Incorporated

DMG6601LVT

ADVANCE INFORMTION


P Channel - Q2

0

2

4

6

8

0

0.5

1.0

1.5

2.0

10

-V , DRAIN -SOURCE VOLTAGE (V)

Fig. 13 Typical Output Characteristics

DS

-I

, D

R

AI

N

C

U

R

R

E

N

T

(A)

D

V

= -3.0V

GS

V

= -3.5V

GS

V

= -4.0V

GS

V

= -4.5V

GS

V

= -10V

GS

V

= -5.0V

GS

V

= -2.5V

GS

V

= -2.0V

GS

0

2

4

6

8

0

1

2

3

4

10

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 14 Typical Transfer Characteristics

-I

, D

R

AI

N

C

U

R

R

E

N

T (

A

)

D

T = 150 C

A

T = 125 C

A

T = 85 C

A

T = 25 C

A

T = -55 C

A

V

= -5.0V

DS

0.02

0.04

0.06

0.08

0.12

0.14

0.16

0.18

0

2

4

6

8

10

0.10

0.20

0

R

, D

R

AI

N-

S

O

U

R

C

E

O

N-

R

ES

IS

TAN

C

E (

)

DS

(O

N)

-I , DRAIN SOURCE CURRENT (A)

Fig. 15 Typical On-Resistance vs.

Drain Current and Gate Voltage

D

V

= -4.5V

GS

V

= -10V

GS

V

= -2.5V

GS

0.04

0.08

0.12

0.16

2

3

4

5

6

7

8

9

10

0

-V , GATE-SOURCE VOLTAGE (V)

GS

Fig. 16 Typical Drain-Source On-Resistance

vs. Gate-Source Voltage

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-R

ES

IS

TA

N

C

E (

)

DS

(O

N)

I = -2A

D

0.04

0.08

0.12

0.16

0

2

4

6

8

10

0.20

0

-I , DRAIN SOURCE CURRENT (A)

Fig. 17 Typical On-Resistance vs.

Drain Current and Temperature

D

R

, DRAIN-

S

O

URCE

O

N-

RE

SI

ST

ANC

E

(

)

DS

(O

N)

T = -55 C

A

T = 25 C

A

T = 85 C

A

T = 125 C

A

T = 150 C

A

V

= -4.5V

GS

0.6

0.8

1.2

1.4

1.8

1.0

R

, D

R

AI

N

-S

O

U

R

C

E

O

N

-R

ESI

ST

A

NCE

(

N

O

R

M

A

L

IZE

D

)

DS

(O

N)

1.6

-50

-25

0

25

50

75

100 125 150

T , JUNCTION TEMPERATURE ( C)

J

Fig. 18 On-Resistance Variation with Temperature

V

= -4.5V

I = -5A

GS

D

V

= -10V

I = -10A

GS

D

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